september 2000 ? 2000 fairchild semiconductor corporation fds6690s rev c(w) fds6690s 30v n - channel powertrench ? ? ? ? syncfet ? general description the fds6690s is designed to replace a single so-8 mosfet and schottky diode in synchronous dc:dc power supplies. this 30v mosfet is designed to maximize power conversion efficiency, providing a low r ds(on) and low gate charge. the fds6690s includes an integrated schottky diode using fairchild?s monolithic syncfet technology. the performance of the fds6690s as the low-side switch in a synchronous rectifier is close to the performance of the fds6690a in parallel with a schottky diode. applications ? dc/dc converter ? motor drives features ? 10 a, 30 v. r ds(on) = 0.016 ? @ v gs = 10 v r ds(on) = 0.025 ? @ v gs = 4.5 v ? includes syncfet schottky diode ? low gate charge (20 nc typical) ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability s d s s so-8 d d d g 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) 10 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 50 c/w r jc thermal resistance, junction-to-case (note 1) 25 c/w package marking and ordering information device marking device reel size tape width quantity fds6690s fds6690s 13?? 12mm 2500 units fds6690s
fds6680s rev c (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 1 ma 30 v ? bv dss === ? t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 c 23 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 500 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1 2.4 3 v ? v gs(th) === ? t j gate threshold voltage temperature coefficient i d = 1 ma, referenced to 25 c -6 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 10 a v gs = 4.5 v, i d = 8.5 a v gs =10 v, i d =10 a, t j =125 c 13 20 19 16 25 26 m ? i d(on) on?state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds = 15 v, i d = 10 a 26 s dynamic characteristics c iss input capacitance 1233 pf c oss output capacitance 344 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 106 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 5 10 ns t d(off) turn?off delay time 25 40 ns t f turn?off fall time v ds = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 11 20 ns q g total gate charge 11 16 nc q gs gate?source charge 5 nc q gd gate?drain charge v ds = 15 v, i d = 10 a, v gs = 5 v 4nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 3.5 a v sd drain?source diode forward voltage v gs = 0 v, i s = 3.5 a (note 2) 0.5 0.7 v t rr diode reverse recovery time 17 ns q rr diode reverse recovery charge i f = 10a d if /d t = 300 a/s (note 3) 12.5 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 50/w when mounted on a 1in 2 pad of 2 oz copper b) 105/w when mounted on a .04 in 2 pad of 2 oz copper c) 125/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. see ?syncfet schottky body diode characteristics? below. fds6690s
fds6680s rev c (w) typical characteristics 0 10 20 30 40 50 0123 v ds , drain-source voltage (v) 5.0v 4.5v 4.0v 3.5v v gs = 10v 6.0v 0.6 1 1.4 1.8 2.2 2.6 0 1020304050 i d , drain current (a) v gs = 4.0v 6.0v 8.0v 10v 5.0v 4.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.4 0.7 1 1.3 1.6 1.9 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 10a v gs = 10v 0 0.01 0.02 0.03 0.04 0.05 0.06 246810 v gs , gate to source voltage (v) i d = 5a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 50 1.5 2.5 3.5 4.5 5.5 v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = 5v 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds6690s
fds6680s rev c (w) typical characteristics 0 2 4 6 8 10 036912151821 q g , gate charge (nc) i d =10a v ds = 5v 15v 10v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) dc 10s 1s 100ms 100 ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) single pulse r ja = 125c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r ja (t) = r(t) + r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds6690s
fds6680s rev c (w) typical characteristics (continued) syncfet schottky body diode characteristics fairchild?s syncfet process embeds a schottky diode in parallel with powertrench mosfet. this diode exhibits similar characteristics to a discrete external schottky diode in parallel with a mosfet. figure 12 shows the reverse recovery characteristic of the fds6690s. figure 12. fds6690s syncfet body diode reverse recovery characteristic. for comparison purposes, figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size mosfet produced without syncfet (fds6690a). figure 13. non-syncfet (fds6690a) body diode reverse recovery characteristic. schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. this will increase the power in the device. figure 14. syncfet body diode reverse leakage versus drain-source voltage and temperature. 10ns/div 3a/div fds6690s 10ns/div 3a/div 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 v ds , reverse voltage (v) 125 o c 25 o c 0v 0v
soic(8lds) packaging configuration: figure 1.0 components leader tape 1680mm minimum or 210 empty pockets trailer tape 640mm minimum or 80 empty pockets soic(8lds) tape leader and trailer configuration: figure 2.0 cover tape carrier tape note/comments packaging option soic (8lds) packaging information standard (no flow code) l86z f011 packaging type reel size tnr 13" dia rail/tube - tnr 13" dia qty per reel/tube/bag 2,500 95 4,000 box dimension (mm) 343x64x343 530x130x83 343x64x343 max qty per box 5,000 30,000 8,000 d84z tnr 7" dia 500 184x187x47 1,000 weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 weight per reel (kg) 0.6060 - 0.9696 0.1182 f63tn label esd label 343mm x 342mm x 64mm standard intermediate box esd label f63tnr label sample f63tnlabel lot: cbvk741b019 fsid: fds9953a d/c1: d9842 qty1: spec rev: spec: qty: 2500 d/c2: qty2: cpn: n/f: f (f63tnr)3 f 852 nds 9959 soic-8 unit orientation f 852 nds 9959 pin 1 static dissipative embossed carrier tape
? 1998 fairchild semiconductor corporation dimensions are in millimeter pkg type a0 b0 w d0 d1 e1 e2 f p1 p0 k0 t wc tc soic (8lds) (12mm) 6.50 +/-0.10 5.30 +/-0.10 12.0 +/-0.3 1.55 +/-0.05 1.60 +/-0.10 1.75 +/-0.10 10.25 min 5.50 +/-0.05 8.0 +/-0.1 4.0 +/-0.1 2.1 +/-0.10 0.450 +/- 0.150 9.2 +/-0.3 0.06 +/-0.02 p1 a0 d1 p0 f w e1 d0 e2 b0 tc wc k0 t dimensions are in inches and millimeters tape size reel option dim a dim b dim c dim d dim n dim w1 dim w2 dim w3 (lsl-usl) 12mm 7" dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 12mm 13" dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 0.606 11.9 15.4 see detail aa dim a max 13" diameter option 7" diameter option dim a max see detail aa w3 w2 max measured at hub w1 measured at hub dim n dim d min dim c b min detail aa notes: a0, b0, and k0 dimensions are determined with respect to the eia/jedec rs-481 rotational and lateral movement requirements (see sketches a, b, and c). 20 deg maximum component rotation 0.5mm maximum 0.5mm maximum sketch c (top view) component lateral movement typical component cavity center line 20 deg maximum typical component center line b0 a0 sketch b (top view) component rotation sketch a (side or front sectional view) component rotation user direction of feed soic(8lds) embossed carrier tape configuration: figure 3.0 soic(8lds) reel configuration: figure 4.0 so-8 tape and reel data and package dimensions, continued july 1999, rev. b
soic-8 (fs pkg code s1) 1 : 1 scale 1:1 on letter size paper di me n si o n s s h ow n be l ow a re in : inches [millimeters] part weight per unit (gram): 0.0774 so-8 tape and reel data and package dimensions, continued september 1998, rev. a 9
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchilds products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification p roduct status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. qfet? qs? qt optoelectronics? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pop? powertrench ? rev. f1 acex? bottomless? coolfet? crossvolt? dome? e 2 cmos tm ensigna tm fact? fact quiet series? fast ? vcx?
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